3 μm process

Semiconductor device fabrication

MOSFET scaling (process nodes)
020 µm – 1968 010 µm – 1971 006 µm – 1974 003 µm – 1977 1.5 µm – 1981 001 µm – 1984 800 nm – 1987 600 nm – 1990 350 nm – 1993 250 nm – 1996 180 nm – 1999 130 nm – 2001 090 nm – 2003 065 nm – 2005 045 nm – 2007 032 nm – 2009 028 nm – 2010 022 nm – 2012 014 nm – 2014 010 nm – 2016 007 nm – 2018 005 nm – 2020 003 nm – 2022
Future 002 nm ~ 2024
Half-nodes Density CMOS Device (multi-gate) Moore's law Transistor count Semiconductor Industry Nanoelectronics
v t e

The 3 μm process is the level of MOSFET semiconductor process technology that was reached around 1977,^[1]^[2] by leading semiconductor companies such as Intel.

Products featuring 3 μm manufacturing process

Intel's 8085, 8086, 8088 CPU's launched in 1976, 1978, 1979, respectively, were manufactured using its 3.2 μm NMOS (HMOS) process.^[1] ^{[failed verification]}.^[3]^{[dubious – discuss]}
Hitachi's 4 kbit HM6147 SRAM memory chip, launched in 1978, introduced the twin-well CMOS process, at 3 μm.^[4]
Motorola 68000 (MC68000) CPU, launched in 1979, was originally fabricated using an HMOS process with a 3.5 μm feature size.^[5]^{[circular reference]}
The ARM1 was launched in 1985 and manufactured on a 3 μm process.^[6]

^ ^a ^b Mueller, S (21 July 2006). "Microprocessors from 1971 to the Present". informIT. Retrieved 11 May 2012.
^ Myslewski, R (15 November 2011). "Happy 40th birthday, Intel 4004!". TheRegister.
^ "History of the Intel Microprocessor - Listoid". Archived from the original on 27 April 2015. Retrieved 5 January 2014.
^ "1978: Double-well fast CMOS SRAM (Hitachi)" (PDF). Semiconductor History Museum of Japan. Archived from the original (PDF) on 5 July 2019. Retrieved 5 July 2019.
^ Motorola 68000
^ "ARM's Race to Embedded World Domination".